한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.11-11
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- 2008
Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio
- Kim, Young-Yi (Sungkyunkwan Univ.) ;
- Han, Won-Suk (Sungkyunkwan Univ.) ;
- Kong, Bo-Hyun (Sungkyunkwan Univ.) ;
- Cho, Hyung-Koun (Sungkyunkwan Univ.) ;
- Kim, Jun-Ho (Kyungpook National HanKook Univ.) ;
- Lee, Ho-Seoung (Kyungpook National HanKook Univ.)
- 발행 : 2008.11.06
초록
ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials (