한국정보디스플레이학회:학술대회논문집
- 2008.10a
- /
- Pages.1203-1207
- /
- 2008
Oxide Semiconductor TFTs for the Next Generation LCD-TV Applications
- Lee, Je-Hun (LCD Business, Samsung Electronics Co., LTD) ;
- Kim, Do-Hyun (LCD Business, Samsung Electronics Co., LTD) ;
- Yang, Dong-Ju (LCD Business, Samsung Electronics Co., LTD) ;
- Hong, Sun-Young (LCD Business, Samsung Electronics Co., LTD) ;
- Yoon, Kap-Soo (LCD Business, Samsung Electronics Co., LTD) ;
- Hong, Pil-Soon (LCD Business, Samsung Electronics Co., LTD) ;
- Jeong, Chang-Oh (LCD Business, Samsung Electronics Co., LTD) ;
- Lee, Woo-Geun (LCD Business, Samsung Electronics Co., LTD) ;
- Song, Jin-Ho (LCD Business, Samsung Electronics Co., LTD) ;
- Kim, Shi-Yul (LCD Business, Samsung Electronics Co., LTD) ;
- Kim, Sang-Soo (LCD Business, Samsung Electronics Co., LTD) ;
- Son, Kyoung-Seok (Samsung Advanced Institute of Technology, Display Device & Processing Lab) ;
- Kim, Tae-Sang (Samsung Advanced Institute of Technology, Display Device & Processing Lab) ;
- Kwon, Jang-Yeon (Samsung Advanced Institute of Technology, Display Device & Processing Lab) ;
- Lee, Sang-Yoon (Samsung Advanced Institute of Technology, Display Device & Processing Lab)
- Published : 2008.10.13
Abstract
For a large sized, ultra definition (UD) and high refresh rate for motion blur free AMLCD TVs, amorphous IGZO thin film transistor (TFT) are applied and investigated in terms of threshold voltage (