한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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- Pages.254-257
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- 2008
Effect of deposition method of source/drain electrode on a top gate ZnO TFT Performance
- Kopark, Sang-Hee (Transparent Electronics Team, ETRI) ;
- Hwang, Chi-Sun (Transparent Electronics Team, ETRI) ;
- Yang, Shin-Hyuk (Transparent Electronics Team, ETRI) ;
- Yun, Young-Sun (Pla-works) ;
- Park, Byung-Chang (Pla-works)
- 발행 : 2008.10.13
초록
We have investigated the effect of source/drain electrode deposition method on a performance of top gate structured ZnO TFT performance. TFT using S/D of ITO film, consisted of bi-layer which deposited by ion beam assisted sputtering at the initial stage then deposited by DC magnetron sputtering, showed better performance compared to that using S/D of ITO deposited by just DC magnetron sputtering. Two ITO films exhibited different grain shapes and these resulted in different etching properties. We also suspect that charge trapping on the glass substrate (back channel) during the ITO film deposition may influence the characteristics of top gate structured ZnO TFT.
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