한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.211-213
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- 2008
Effect of Hafnium Oxide on ALD Grown ZnO Thin Film Transistor
Abstract
The TFTs from ZnO semiconductor with hafnium oxide dielectrics were prepared by atomic layer deposition to characterize the electrical properties. Good electrical properties of oxide TFT was obtained with channel mobility of