한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.109-112
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- 2008
Joule-heating induced crystallization (JIC) for AMOLED TFT-Backplanes
- Hong, Won-Eui (Dept. of Materials Science and Engineering, Hongik Univ.) ;
- Lee, Joo-Yeol (EnSilTech Corporation) ;
- Park, Doo-Jung (Dept. of Materials Science and Engineering, Hongik Univ.) ;
- Ro, Jae-Sang (Dept. of Materials Science and Engineering, Hongik Univ.) ;
- Ahn, Ji-Su (Samsung SDI Co., LTD.) ;
- Lee, Il-Jeong (Samsung SDI Co., LTD.) ;
- Kim, Sung-Chul (Samsung SDI Co., LTD.)
- Published : 2008.10.13
Abstract
The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according transmission electron microscopy. JIC poly-Si exhibits an excellent uniformity with regards to the grain size. We report here the blanket crystallization of the large area using the