Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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High-Q factor ZnO-based Film Bulk Acoustic Resonator Devices

  • Yoon, Gi-Wan (Information and Communications University(ICU)) ;
  • Mai, Linh (Information and Communications University(ICU))
  • Published : 2008.10.31
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Abstract

In this paper, we studied a ZnO-based film bulk acoustic resonator (FBAR) device fabricated on a specially designed multi-layerd Bragg reflector part. Very thin chromium adhesion layers (0,03um thick) were additionally deposited to improve the quality of the Bragg reflector and some thermal treatments were performed to improve the resonant characteristics of the device. At the operating frequency of ${\sim}2.7GHz$, excellent resonant characteristics were observed in terms of return loss and quality factor, and effective electromechanical coupling coefficient. These findings are expected to be highly promising and effective for improving the performance of the FBAR devices at high frequency.

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