Effects of Thick Bottom Electrode on ZnO-based FBAR Devices

In this paper, the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices with thick bottom electrode are investigated. The ultra-thin Cr film (300 ${\AA}-thick$) between $SiO_2$ film and W film is formed by a sputtering-deposition in order to enhance the adherence at their interfaces. The resonance frequency of three different resonator devices was observed to be ${\sim}2.7$ GHz, and the resonance characteristics $(S_{11})$ of the FBAR devices were found to have a strong dependence on the thickness of bottom electrode.