Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Efficiency enhancement of Organic Light Emitting Diodes by the AlON interfacial Layer

산소질화알루미늄 계면층에 의한 유기발광 소자의 효율 향상

  • Park, Hyung-Jun (School of information and communication engineering, Sungkyunkwan University) ;
  • Hai, Jin Zheng (School of information and communication engineering, Sungkyunkwan University) ;
  • Nam, Eun-Kyoung (Department of physics, Institute of Basic Science, and Brain 21 Physics Research Division, Sungkyunkwan University) ;
  • Jung, Dong-Geun (Department of physics, Institute of Basic Science, and Brain 21 Physics Research Division, Sungkyunkwan University) ;
  • Yi, Jun-Sin (School of information and communication engineering, Sungkyunkwan University)
  • 박형준 (성균관대학교 정보통신공학부) ;
  • 김정해 (성균관대학교 정보통신공학부) ;
  • 남은경 (성균관대학교 물리학과) ;
  • 정동근 (성균관대학교 물리학과) ;
  • 이준신 (성균관대학교 정보통신공학부)
  • Published : 2007.06.21
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Abstract

In this work, Organic Light Emitting Diodes using Aluminum-Oxynitride as a hole-injecting interfacial have been fabricated. This interfacial layer is inserted at the ITO/N,NV-diphenyl-N, NV-bis(3-methylphenyl)-1,1V-diphenyl-4,4V-diamine (TPD) interface. The brightness and efficiency of the device with the AION film is higher than that of the device without it. The enhancements are attributed to an improved balance of hole and electron injections due to the energy level realignment and the change in carrier tunneling probability by the interfacial layer.

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