한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
- /
- Pages.346-347
- /
- 2007
3C-SiC 완충층을 이용한 AIN 박막의 결정성장
Crystal growth of AlN thin films on 3C-SiC buffer layer
- Lee, Tae-Won (Univ. of Ulsan) ;
- Chung, Gwiy-Sang (Univ. of Ulsan)
- 발행 : 2007.06.21
초록
Aluminum nitride (AlN) thin films were deposited on Polycrystalline (poly) 3C-SiC buffer layers using pulsed reactive magnetron sputtering. Characteristics of AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. As a result, highly (002) oriented AlN thin films with almost free residual stress were achieved using 3C-SiC buffer layers. Therefore, AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.