한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.191-191
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- 2007
Ta-Mo, Ru-Zr 이원합금 금속 게이트를 이용한 $ZrO_2$ 절연막의 MOS-capacitor 특성 비교
Characteristics of the Interface between Metal gate electrodes and $ZrO_2$ dielectrics for NMOS devices
- An, Jae-Hong (Hankook Aviation University, Department of Electronic Engineering) ;
- Son, Ki-Min (Hankook Aviation University, Department of Electronic Engineering) ;
- Hong, Shin-Nam (Hankook Aviation University, Department of Electronic Engineering)
- 발행 : 2007.06.21
초록
유효 산화막 두께가 약 2.0nm 정도의