Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.191-191
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- 2007
Characteristics of the Interface between Metal gate electrodes and $ZrO_2$ dielectrics for NMOS devices
Ta-Mo, Ru-Zr 이원합금 금속 게이트를 이용한 $ZrO_2$ 절연막의 MOS-capacitor 특성 비교
- An, Jae-Hong (Hankook Aviation University, Department of Electronic Engineering) ;
- Son, Ki-Min (Hankook Aviation University, Department of Electronic Engineering) ;
- Hong, Shin-Nam (Hankook Aviation University, Department of Electronic Engineering)
- Published : 2007.06.21
Abstract
유효 산화막 두께가 약 2.0nm 정도의