한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.154-155
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- 2007
PRAM에서 $Ge_1Se_1Te_2$ 와 전극의 접촉 면적을 줄이는 방법에 대한 효과
Reduced contact size in $Ge_1Se_1Te_2$ for phase change random access memory
- Lim, Dong-Kyu (Kwangwoon Univ.) ;
- Kim, Jae-Hoon (Kwangwoon Univ.) ;
- Na, Min-Seok (Kwangwoon Univ.) ;
- Choi, Hyuk (Kwangwoon Univ.) ;
- Chung, Hong-Bay (Kwangwoon Univ.)
- 발행 : 2007.06.21
초록
PRAM(Phase-Change RAM) is a promising memory that can solve the problem of conventional memory and has the nearly ideal memory characteristics. We reviewed the issues for high density PRAM integration. Writing current reduction is the most urgent problem for high density PRAM realization. So, we studied new constitution of