한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.727-729
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- 2007
Gate dielectric based on organic-inorganic hybrid polymer in organic thin-film transistors
- Lee, Seong-Hui (Department of Materials Science and Engineering, Yonsei University) ;
- Jeong, Sun-Ho (Department of Materials Science and Engineering, Yonsei University) ;
- Moon, Joo-Ho (Department of Materials Science and Engineering, Yonsei University)
- Published : 2007.08.27
Abstract
Inorganic-organic hybrid polymer provides various advantages including low-temperature process, high dielectric constant and direct photo-patterning. The hybrid dielectric was synthesized by the sol-gel process in which an acid-catalyzed solution of Si alkoxide and Zr alkoxide was used as a precursor. The electrical performance of transistors with hybrid dielectric was investigated.