Atmospheric Metal Doping System and Application for Poly-Si Backplane

  • Shin, D.H. (Research Center of VIATRON TECHNOLOGIES Inc.) ;
  • Lee, J.M. (Research Center of VIATRON TECHNOLOGIES Inc.) ;
  • Lee, S.K. (Research Center of VIATRON TECHNOLOGIES Inc.) ;
  • Kim, H.J. (Research Center of VIATRON TECHNOLOGIES Inc.)
  • 발행 : 2007.08.27

초록

VIATRON TECHNOLOGIES has developed an $\underline{A}$tmospheric $\underline{M}$etal $\underline{D}$oping (AMD) system which uniformly dopes metal species onto a substrate. The AMD system injects metal-organic vapor over substrate using an injection head with a scan motion. One of important application of this system is a metalinduced crystallization of amorphous Si for manufacturing AMOLED poly-Si panels. The AMD system with a use of Ni vapor source produces doping of trace amount of Ni onto amorphous Si, enabling uniform MIC crystallization. Also, the operation without vacuum condition offers advantages such as easy maintenance, low cost production, and large glass processes.

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