한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Structural Effect on Backlight Induced-leakage Current in Amorphous Silicon Thin Film Transistor

  • Kim, Sho-Yeon (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Kim, Tae-Hyun (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Jeon, Jae-Hong (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Choe, Hee-Hwan (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Lee, Kang-Woong (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
  • Seo, Jong-Hyun (Department of Materials Science and Engineering, Korea Aerospace University)
  • Published : 2007.08.27
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Abstract

Leakage current produced by backside illumination on bottom-gated amorphous silicon thin film transistor has been investigated. The experimental results show that the leakage current of bottomgated structure is significantly dependent on the shape of amorphous silicon pattern. A proper design of amorphous silicon pattern has been suggested in viewpoint of reducing the leakage current as well as mass production.

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