한국정보디스플레이학회:학술대회논문집
- 2007.08b
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- Pages.1301-1304
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- 2007
Degradation of High Performance Short Channel N-type Poly-Si TFT under the Electrical Bias Caused by Self-Heating
- Choi, Sung-Hwan (School of Electrical Engineering and Computer Science, Seoul National University) ;
- Song, In-Hyuk (School of Electrical Engineering and Computer Science, Seoul National University) ;
- Shin, Hee-Sun (School of Electrical Engineering and Computer Science, Seoul National University) ;
- Park, Sang-Geun (School of Electrical Engineering and Computer Science, Seoul National University) ;
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Han, Min-Koo
(School of Electrical Engineering and Computer Science, Seoul National University)
- Published : 2007.08.27
Abstract
We have investigated degradation of short channel n-type poly-Si TFTs with LDD under high gate and drain voltage stress due to self-heating. We have found that the threshold voltage of short channel TFT is shifted to negative direction on the selfheating stress, whereas the threshold voltage of long channel is moved to positive direction.