한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Threshold Voltage Control of a-Si TFT by Delta Doping of Phosphorous

  • Soh, Hoe-Sup (School of Display Engineering, Hoseo University) ;
  • Kim, Cheol-Se (Advanced Technology Development Department, LG Philips LCD) ;
  • Kim, Eung-Do (Advanced Technology Development Department, LG Philips LCD)
  • 발행 : 2007.08.27
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초록

Delta doping method can separate the threshold voltage control region from the charge transport region in a-Si TFT, whereby the threshold voltage of a TFT could be modified. Threshold voltage could be changed by delta doping, while field effect mobility was estimated to be 80% of that of standard TFT.

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