InGaN/GaN 발광다이오드의 누설전류의 이론적 모델과 기생 파라미터 추출

Theoretical Model and Parasitic Parameters Extraction of Leakage Current in InGaN/GaN Light Emitting Diodes

We have theoretically derived a electrical model and extracted a parasitic parameters of leakage current in InGaN/GaN light emitting diodes (LEDs). The parasitic parameters of our LED are $R_p=10^{10}{\Omega}$, $I_{0,2}=10^{-17}A$ and $n_2=3.6$, which provide information of leakage current.