Effect of $SrRuO_3$ buffer layers in enhancing resistance changing of $Pr_{0.7}Ca_{0.3}MnO_3$ films for nonvolatile memory application

  • Joo, Sang-Hyun (Department of Nano Science and Technology, University of Seoul) ;
  • Han, Seung-Woo (Department of Nano Science and Technology, University of Seoul) ;
  • Park, Kyoung-Wan (Department of Nano Science and Technology, University of Seoul) ;
  • Hong, Wan-Shick (Department of Nano Science and Technology, University of Seoul) ;
  • Sok, Jung-Hyun (Department of Nano Science and Technology, University of Seoul)
  • 발행 : 2007.02.06