Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2007.02a
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- Pages.122-122
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- 2007
Properties of Mg doped GaAs Epitaxial Layers Grown Subjected to Rapid Thermal Annealing
- Kim, Jon-Ho (Department of Nano System Engineering, Institute of Nano Manufacturing, Inje University) ;
- Park, Ho-Jin (Department of Nano System Engineering, Institute of Nano Manufacturing, Inje University) ;
- Kim, Do-Yeob (Department of Nano System Engineering, Institute of Nano Manufacturing, Inje University) ;
- Jeon, Su-Min (Department of Nano System Engineering, Institute of Nano Manufacturing, Inje University) ;
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Jeon, Min-Hyun
(Department of Nano System Engineering, Institute of Nano Manufacturing, Inje University) ;
- Ryu, H.H. (Department of Nano System Engineering, Institute of Nano Manufacturing, Inje University) ;
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Leem, J.Y.
(Department of Nano System Engineering, Institute of Nano Manufacturing, Inje University) ;
- Kim, Jong-Su (Nano Photonics Group, Advanced Photonics Research Institute) ;
- Lee, D.Y. (LM Research and Development, Samsung Electro-mechanics. Co.,Ltd)
- Published : 2007.02.06
Abstract
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