한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 추계학술대회 논문집
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- Pages.116-116
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- 2007
질소 처리를 통한 Hafnium silicate 박막의 특성 평가
The Study of Hafnium silicate by Nitrogen Annealing Treatment
- Suh, Dong-Chan (Department of Ceramic Engineering, Yonsei University) ;
- Cho, Young-Dae (Department of Ceramic Engineering, Yonsei University) ;
- Ko, Dae-Hong (Department of Ceramic Engineering, Yonsei University)
- 발행 : 2007.11.01
초록
We investigated the characteristics of the Hafnium silicate (Hf-silicate) film which is grown by ALD (atomic layer deposition). The Hf-silicate films that were annealed by the RTP. The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas and