Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.77-78
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- 2007
The characteristic study of amorphous chalcogenide As-Ge-Se-S thin film for photonic crystal application
포토닉 크리스탈 응용을 위한 비정질 칼코게나이드 As-Ge-Se-S 박막의 특성 연구
- Nam, Ki-Hyeon (Kwangwoon Univ.) ;
- Ju, Long-Yun (Kwangwoon Univ.) ;
- Choi, Hyuk (Kwangwoon Univ.) ;
- Chung, Hong-Bay (Kwangwoon Univ.)
- Published : 2007.11.01
Abstract
In this paper, we suppose that the 1-dimensional photonic crystal using holography lithography. We used Ag doped amorphous AsGeSeS which belongs in the chalcogenide materials have sensitive photoluminescence property. The purpose of this experiment is the process to complete 3-D photonic crystal after making 2-D photonic crystal. The lattice formation was made an observation by irradiating He-Ne laser with the AsGeSeS film leaned obliquely. Then, by measuring formed diffraction beam, the diffraction lattice was calculated.