한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 추계학술대회 논문집
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- Pages.11-12
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- 2007
Pseudo-MOSFET을 이용한 nano-sSOI 기판의 특성 평가
Evaluation of nano-sSOI wafer using pseudo-MOSFET
- Jung, Myung-Ho (Department of Electronic materials engineering, Kwangwon Univ.) ;
- Kim, Kwan-Su (Department of Electronic materials engineering, Kwangwon Univ.) ;
- Choi, Chel-Jong (Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute) ;
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Cho, Won-Ju
(Department of Electronic materials engineering, Kwangwon Univ.)
- 발행 : 2007.11.01
초록
The electrical characteristics of strained-SOI wafer were evaluated by using pseudo-MOSFET. The electrical characteristics of sSOI pseudo-MOSFET were superior to conventional SOI device. Moreover, the electrical characteristics were enhanced by forming gas anneal due to reduction of back interface trap density between substrate and buried oxide.