Structural Phase Transformations in Semiconductor Material Induced by Nanoindentation

나노압입에 의한 반도체 소재의 구조상전이 해석

Structural phase transformations of silicon during nanoindentation were investigated in detail at the atomic level. The molecular dynamics simulations of nanoindentation on the (100), (110) and (111) surface of single crystalline silicon were simulated, and this supported the theoretical prediction of the anisotropic behavior of structural phase transformations. Simulations showed that microscopic aspects of phase transformation varied according to the crystallographic orientation of the contact surface and were directly linked to the slip system.