Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2006.02a
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- Pages.148-148
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- 2006
Position dependence of Si delta doped layer in the barrier of InGaN/GaN single quantum well
- Kwon Min-Ki (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
- Park Il-Kyu (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
- Kim Ja-Yeon (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
- Kim Jeom-Oh (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
- Seo Seong-Bum (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
- Park Seong-Ju (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
- Kang Sang-Won (Samsung Electro-Mechanics) ;
- Min Kyeong-Ik (Samsung Electro-Mechanics) ;
- Park Gil-Han (Samsung Electro-Mechanics)
- Published : 2006.02.01
Abstract
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