Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)
- 2006.04a
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- Pages.134-134
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- 2006
Effects of No addition on chemical dry etching of silicon oxide layers in $F_2/Ar\;and\;F_2/Ar/N_2$ remote plasma processing
$F_2/Ar$ 과 $F_2/Ar/N_2$ 리모트 플라즈마 산화막 식각에 대한 NO를 첨가효과
- Published : 2006.04.01
Abstract
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