Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Multi-component $ZnO-In_2O_3-SnO_2$ thin films deposited by RF magnetron co-sputtering

  • Lee, Byoung-Hoon (Department of Material Science and Engineering, Korea University) ;
  • Hur, Jae-Sung (Department of Material Science and Engineering, Korea University) ;
  • Back, Sang-Yul (Department of Material Science and Engineering, Korea University) ;
  • Lee, Jeong-Seop (Department of Material Science and Engineering, Korea University) ;
  • Song, Jung-Bin (Department of Material Science and Engineering, Korea University) ;
  • Son, Chang-Sik (Department of Photonics, Silla University) ;
  • Choi, In-Hoon (Department of Material Science and Engineering, Korea University)
  • Published : 2006.10.12
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Abstract

Multi-component $ZnO-In_2O_3-SnO_2$ thin films have been prepared by RF magnetron co-sputtering using targets composed of $In_3Sn_4O_{12}$(99.99%) [1] and ZnO(99.99%) at room temperature. $In_3Sn_4O_{12}$ contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / (RFI + RF2)] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied $0{\sim}100W$ respectively. The thickness of the films was $350{\sim}650nm$. The composit ion concentrations of the each film were measured with EPMA, AES and XPS. The low resistivity of $1-2\;{\times}\;10^3$ and an average transmittance above 80% in the visible range were attained for the films over a range of ${\delta}\;(0.3\;{\leq}\;{\delta}\;{\leq}\;0.5)$. The films also showed a high chemical stability with time and a good uniformity.

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