R-T characteristic of Bi2212 Epitaxial thin films by growth in MgO(100) substrate

MgO(100)기판에 성장시킨 Bi2212 에피택셜 박막의 R-T특성

BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 650 and $720^{\circ}C$ and the highly condensed ozone gas pressure ($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}\;Torr$.