Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
- /
- Pages.537-538
- /
- 2006
R-T characteristic of Bi2212 Epitaxial thin films by growth in MgO(100) substrate
MgO(100)기판에 성장시킨 Bi2212 에피택셜 박막의 R-T특성
-
Yang, Seung-Ho
(Dongshin Univ.) ;
- Lim, Jung-Kwan (Dongshin Univ.) ;
- Park, Yong-Pil (Dongshin Univ.)
- Published : 2006.06.22
Abstract
BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 650 and