Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.477-478
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- 2006
Characteristics of $1.3\;{\mu}m$ InAs/GaAs Quantum Dot Laser Diode for High-Power Applications
고출력 응용을 위한 $1.3\;{\mu}m$ InAs/GaAs 양자점 레이저 다이오드의 특성 연구
- Kim, Kyoung-Chan (Korea Institute of Science and Technology) ;
- Yoo, Young-Chae (Korea Institute of Science and Technology) ;
- Lee, Jung-Il (Korea Institute of Science and Technology) ;
- Han, Il-Ki (Korea Institute of Science and Technology) ;
- Kim, Tae-Geun (Korea Univ.)
- Published : 2006.06.22
Abstract
Characteristics of InAs/GaAs quantum dot (QD) ridge laser diodes (LDs) are investigated for high-power