Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.309-310
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- 2006
Frequency characteristics of Li doped ZnO thin film resonator annealed by various temperatures
Li:ZnO를 이용하여 제조한 FBAR의 열처리 온도에 따른 주파수 특성
- Kim, Bong-Seok (Department of Information and Communication, Sungkyunkwan University) ;
- Kim, Eung-Kwon (Department of Information and Communication, Sungkyunkwan University) ;
- Hwang, Hyun-Suk (Department of Information and Communication, Sungkyunkwan University) ;
- Kang, Hyun-Il (Department of Information and Communication, Sungkyunkwan University) ;
- Lee, Kyu-Il (Department of Information and Communication, Sungkyunkwan University) ;
- Lee, Tae-Yong (Department of Information and Communication, Sungkyunkwan University) ;
- Song, Joon-Tae (Department of Information and Communication, Sungkyunkwan University)
- 김봉석 (성균관대학교 정보통신공학과) ;
- 김응권 (성균관대학교 정보통신공학과) ;
- 황현석 (성균관대학교 정보통신공학과) ;
- 강현일 (성균관대학교 정보통신공학과) ;
- 이규일 (성균관대학교 정보통신공학과) ;
- 이태용 (성균관대학교 정보통신공학과) ;
- 송준태 (성균관대학교 정보통신공학과)
- Published : 2006.06.22
Abstract
In this paper, frequency characteristic of FBAR was studied as a function of annealing temperature. we have used Li dopant to enhance electrical properties of ZnO thin film. Li:ZnO thin film was deposited on Al(300 nm)/