Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.22-23
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- 2006
Improvement of Turn-off Switching Characteristics of the PT-IGBT by Proton Irradiation
양성자 조사법에 의한 PI-IGBT의 Turn-off 스위칭 특성 개선
- Choi, Sung-Hwan (Kyungpook National Univ.) ;
- Lee, Yong-Hyun (Kyungpook National Univ.) ;
- Lee, Jong-Hun (Fairchild Semiconductor) ;
- Bae, Young-Ho (Uiduk Univ.)
- Published : 2006.06.22
Abstract
Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with