Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
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- Pages.315-316
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- 2006
Formation of Anodized GaN Nanopores on InGaN/GaN Multi-quantum Well Structures
InGan/GaN 다중양자우물구조 위에 제작되어진 산화된 GaN 나노구멍
- Choi, Jae-Ho (Chonbuk National University) ;
- Kim, Keun-Joo (Chonbuk National University) ;
- Jung, Mi (Photonics Research Center KIST) ;
- Woo, Deok-Ha (Photonics Research Center KIST)
- Published : 2006.11.09
Abstract
We fabricated GaN nanopores m the etching process of anodic oxidation of aluminum. The aluminum was deposited by using E-beam evaporator on p-type GaN. After the aluminum was anodized GaN structure was exposed to the electric field with the oxidat species. The fabricated nanopore structure provides the enhanced intensity of light emission at the wavelengths 470 nm. We investigated the structure of the GaN nanopores from FE-SEM and EDS measurements.