Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
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- Pages.282-283
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- 2006
Transport phenomena of a-Se:As thin film for digital X-ray Conversion Material
디지털 X-선 변환물질을 위한 비소(As) 첨가 비정질 셀레늄(a-Se) 박막의 수송현상
- Park, Chang-Hee (Dong-A University Medical Center) ;
- Kim, Jae-Hyung (Inje University)
- Published : 2006.11.09
Abstract
The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.
Keywords
- digital X-ray detector;
- amorphous selenium(a-Se);
- carrier mobility;
- recombination time;
- X-ray sensitivity