한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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- Pages.249-250
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- 2006
ZnO buffer layer 제작과 c-축 배향성 향상으로 인한 FBAR 성능 개선에 관한 연구
Performance of FBAR devices was enhanced by fabrication of ZnO buffer layer and improvement of c-axis orientation
- Lee, Soon-Bum (Department of Electric and Electronics Engineering in Kyungwon Univ.) ;
- Park, Sung-Hyun (Department of Electric and Electronics Engineering in Kyungwon Univ.) ;
- Kwon, Sang-Jik (Department of Electric and Electronics Engineering in Kyungwon Univ.) ;
- Lee, Neung-Heon (Department of Electric and Electronics Engineering in Kyungwon Univ.) ;
- Shin, Young-Hwa (Department of Electric and Electronics Engineering in Kyungwon Univ.)
- 발행 : 2006.11.09
초록
In this study, we tried to Improve c-axis orientation of ZnO thin films used in a piezoelectric layer of FBAR devices. First. ZnO deposition conditions were determined by changing various conditions of RF sputter such as RF power, pressure and