Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
- /
- Pages.103-104
- /
- 2006
The Electrical and Thermal Properties of Phase Change Memory Cell with Bottom Electrode
하부전극에 따른 상변화 메모리 셀의 전기 및 발열 특성
-
Jang, Nak-Won
(KOREA Maritime Univ.)
;
-
Kim, Hong-Seung
(KOREA Maritime Univ.)
;
- Lee, June-Key (Chonnam Univ.) ;
- Kim, Do-Heyoung (Chonnam Univ.) ;
-
Mah, Suk-Bum
(Yongin Songdam College)
- Published : 2010.04.01
Abstract
PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the reset current and temperature profile of PRAM cells with bottom electrode were calculated by the numerical method.
Keywords