Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of Increase External Quantum Efficiency of GaP LED with AZO Electrode

AZO 전극을 갖는 GaP LED의 외부양자효율 향상에 관한 연구

  • Kim, Kyeong-Min (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Jin, Eun-Mi (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Kim, Deok-Kyu (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Park, Choon-Bae (Wonkwang Univ. School of Electrical Electronic and Information Engineering)
  • 김경민 (원광대학교 전기전자 및 정보공학부) ;
  • 진은미 (원광대학교 전기전자 및 정보공학부) ;
  • 김덕규 (원광대학교 전기전자 및 정보공학부) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2010.04.01
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Abstract

In order to increase the efficiency of LED, transparent electrodes should be also developed. also suitable anti-reflection coating (ARC) is necessary for practical device applications. In our paper, Al-doped ZnO (AZO) films were fabricated by sputtering on GaP substrate(wavelength:620nm). Choosing optimum substrate temperature and sputtering rate, high quality AZO films were formed. We confirmed that the surface and electrical properties, which implemented using the methods of AFM, Hall measurement. The properties of AZO thin films especially depended on the thickness. We presumed that the change of the increase the external quantum efficiency of LED according to the AZO thin film of thickness.

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