한국정보디스플레이학회:학술대회논문집
- 2006.08a
- /
- Pages.1469-1472
- /
- 2006
Study on the Electrical Stability of Al-doped ZnO Thin Films For OLED as an alternative electrode
- Jung, Jong-Kook (Dept. of Advanced Materials Engineering in Korea Polytechnic Univ.) ;
- Lee, Seong-Eui (Dept. of Advanced Materials Engineering in Korea Polytechnic Univ.) ;
- Lim, Sil-Mook (Dept. of Advanced Materials Engineering in Korea Polytechnic Univ.) ;
- Lee, Ho-Nyeon (Display Lab., Samsung Advanced Institute of Technology) ;
- Lee, Young-Gu (Display Lab., Samsung Advanced Institute of Technology)
- Published : 2006.08.22
Abstract
We investigated the electrical and optical properties of ZnO:Al thin films as a function of the thermal process conditions. The film was prepared by RF magnetron sputtering followed by annealing in a box furnace in air. An ZnO:Al (98:2) alloy with the purity of 99.99% (3 inch diameter) was used as the target material. The electrical properties of the transparent electrode, exhibited surface oxidation as a result of rapid oxygen absorption with increasing annealing temperature. The processed ZnO:Al films and commercial ITO(indium-tin-oxide) were applied to an OLED stack to investigate the current density and luminescence efficiency. The efficiency of the device using the ZnO:Al electrode was higher than that from the device using the ITO electrode.
Keywords