한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.1462-1464
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- 2006
Characterization of the ultra thin films of silicon oxynitride deposited by plasma-assisted $N_2O$ oxidation for thin film transistors
- Hwang, Sung-Hyun (School of Information and Communication Engneering, Sungkyunkwan University) ;
- Jung, Sung-Wook (School of Information and Communication Engneering, Sungkyunkwan University) ;
- Kim, Hyun-Min (School of Information and Communication Engneering, Sungkyunkwan University) ;
- Kim, Jun-Sik (School of Information and Communication Engneering, Sungkyunkwan University) ;
- Jang, Kyung-Soo (School of Information and Communication Engneering, Sungkyunkwan University) ;
- Lee, Jeoung-In (School of Information and Communication Engneering, Sungkyunkwan University) ;
- Lee, Kwang-Soo (School of Information and Communication Engneering, Sungkyunkwan University) ;
- Jung, Won-June (School of Information and Communication Engneering, Sungkyunkwan University) ;
- Dhungel, S.K. (School of Information and Communication Engneering, Sungkyunkwan University) ;
- Ghosh, S.N. (School of Information and Communication Engneering, Sungkyunkwan University) ;
- Yi, J. (School of Information and Communication Engneering, Sungkyunkwan University)
- Published : 2006.08.22
Abstract
Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using
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