Performance improvement in bottom-contact pentacene organic thin-film transistors by the PMMA layer insertion

  • Lyoo, Ki-Hyun (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Kim, Byeong-Ju (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Cheon-An (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Jung, Keum-Dong (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Dong-Wook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University)
  • 발행 : 2006.08.22

초록

For the bottom-contact pentacene organic thin-film transistors (OTFTs), the insertion of a thin PMMA layer $(20{\AA})$ between the pentacene and the electrode improves the electrical performances, such as carrier mobility and on-current magnitude, about 4 times larger than those of the devices without the PMMA. The performance enhancement is presumably due to the decreased contact resistance between metal and pentacene by inserting the thin PMMA layer.

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