A Study on Improvement of the Transmittance in the Fringe-Field Switching (FFS) Mode

  • Lee, J.Y. (School of Advanced Materials Engineering, Chonbuk National University) ;
  • Ryu, J.W. (School of Advanced Materials Engineering, Chonbuk National University) ;
  • Lee, S.H. (School of Advanced Materials Engineering, Chonbuk National University)
  • 발행 : 2006.08.22

초록

Pixel structure of the fringe-field switching (FFS) mode to improve transmittance has been studied. New FFS structures related to the electrode structure at the edges of pixel, and the pixel electrode width and distance between electrodes was optimized. The former improves transmittance by minimizing the region of disclination lines. The latter improves it by increasing light efficiency above center of electrodes and also response time.

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