한국정보디스플레이학회:학술대회논문집
- 2006.08a
- /
- Pages.605-608
- /
- 2006
Multicomponent wide band gap oxide semiconductors for thin film transistors
- Fortunato, E. (Materials Science Department/CENIMAT, FCT-UNL) ;
- Barquinha, P. (Materials Science Department/CENIMAT, FCT-UNL) ;
- Pereira, L. (Materials Science Department/CENIMAT, FCT-UNL) ;
- Goncalves, G. (Materials Science Department/CENIMAT, FCT-UNL) ;
- Martins, R. (Materials Science Department/CENIMAT, FCT-UNL)
- Published : 2006.08.22
Abstract
The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above
Keywords