한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.383-386
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- 2006
The Effect of Oxygen Flow Rates on the Electrical Resistivity of MgO Thin Films in AC-PDPs
- Chou, Hong-Chieh (Laboratory for Nanosystem and Plasma, Department of Photonics and Display Institute, National Chial Tung Uvinersity) ;
- Kim, Sung-O (Laboratory for Nanosystem and Plasma, Department of Photonics and Display Institute, National Chial Tung Uvinersity) ;
- Chen, Kuang-Lang (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.) ;
- Chen, Samuel (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.) ;
- Lee, Chien-Pang (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.) ;
- Hsu, Chien-Hsing (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.) ;
- Chou, Kuo-Ching (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.) ;
- Huang, Chih-Ming (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.)
- Published : 2006.08.22
Abstract
Magnesium oxide thin films were deposited with different thickness and oxygen flow rates for investigating the effects of the electrical resistivity of MgO thin films in AC-PDPs. The surface roughness was characterized by AFM. It reveals that higher oxygen flow rate generates higher electrical resistivity of MgO thin films.
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