The Effect of Oxygen Flow Rates on the Electrical Resistivity of MgO Thin Films in AC-PDPs

  • Chou, Hong-Chieh (Laboratory for Nanosystem and Plasma, Department of Photonics and Display Institute, National Chial Tung Uvinersity) ;
  • Kim, Sung-O (Laboratory for Nanosystem and Plasma, Department of Photonics and Display Institute, National Chial Tung Uvinersity) ;
  • Chen, Kuang-Lang (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.) ;
  • Chen, Samuel (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.) ;
  • Lee, Chien-Pang (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.) ;
  • Hsu, Chien-Hsing (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.) ;
  • Chou, Kuo-Ching (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.) ;
  • Huang, Chih-Ming (OPTO-Electronics Business Unit, Chunghwa Picture Tubes, LTD.)
  • Published : 2006.08.22

Abstract

Magnesium oxide thin films were deposited with different thickness and oxygen flow rates for investigating the effects of the electrical resistivity of MgO thin films in AC-PDPs. The surface roughness was characterized by AFM. It reveals that higher oxygen flow rate generates higher electrical resistivity of MgO thin films.

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