한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.70-73
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- 2006
Hole-Trapping in Iodine-Doped Pentacene Films at Low Temperatures
- Yun, W.J. (Research Institute of Physics and Chemistry, Dept. of Physics, Chonbuk National University) ;
- Cho, J.M. (Research Institute of Physics and Chemistry, Dept. of Physics, Chonbuk National University) ;
- Lee, J.K. (Research Institute of Physics and Chemistry, Dept. of Physics, Chonbuk National University)
- Published : 2006.08.22
Abstract
Pentacene films, grown on polyethylene terephthalate (PET) substrates, were doped with Iodine. ESR measurements were made for the films in the temperature range of 100-300 K. Two regimes of doping stages were discernible: a light (intercalation) doping regime and a heavy doping regime. The light doping regime was concluded to be dominated by localized holes that were trapped at low temperatures, which indicated trap states near the valence band edge.
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