Effects of total gas velocity on properties of undoped GaN epitaxial layer grown on sapphire (0001) substrate by MOCVD

  • Chang, K. (Dept. of Chem. Eng.,University of Seoul) ;
  • Kwon, M.S. (Dept. of Mat. Sci. and Eng., University of Seoul) ;
  • Cho, S.I. (Dept. of Chem. Eng.,University of Seoul) ;
  • Kang, T.W. (Quantum-Functional Semiconductor Research Center, Dongguk University) ;
  • Ryu, S.R. (Quantum-Functional Semiconductor Research Center, Dongguk University)
  • 발행 : 2005.02.15