제어로봇시스템학회:학술대회논문집

Institute of Control, Robotics and Systems (제어로봇시스템학회)
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Run-to-Run Control of Inductively Coupled C2F6 Plasmas Etching of SiO2;Construction of a Process Simulator with a CFD code

  • Seo, Seung-T. (Department of Chemical and Biological Engineering, Sogang University) ;
  • Lee, Yong-H. (Department of Chemical and Biological Engineering, Sogang University) ;
  • Lee, Kwang-S. (Department of Chemical and Biological Engineering, Sogang University) ;
  • Yang, Dae-R. (Department of Chemical and Biological Engineering, Korea University) ;
  • Choi, Bum-Kyoo (Department of Mechanical Engineering, Sogang University)
  • Published : 2005.06.02
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Abstract

A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was tuned to reasonably predict the reactive ion etching behavior and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.

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