Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A study on the design of High current and Low Drop Out-voltage Regulator IC using BCD Technology

BCD 기술을 이용한 고전류 및 Low Drop Out-voltage Regulator IC 설계에 관한 연구

  • Park, Tae-Su (School of Information and Electronic engineering, Seokyeong University) ;
  • Choi, In-Chul (School of Information and Electronic engineering, Seokyeong University) ;
  • Lee, Jo-Woon (School of Information and Electronic engineering, Seokyeong University) ;
  • Koo, Yong-Seo (School of Information and Electronic engineering, Seokyeong University)
  • Published : 2005.11.26
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Abstract

In this paper, the design of high current and high performance Regulatior IC using BCD Technology are presented. We design the 5A class regulator IC including the VDMOS Pass Tr. of N-sink array structure. Also, to obtain the high current and low power characteristics, the PMOS and BJT device are adapted for the Pass Tr. It is shown that simulation results of Regulator IC with VDMOS Pass Tr. have the Iout=4.5092A, LDO=7.3mV.

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