Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2005.11a
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- Pages.809-812
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- 2005
Extraction of Substrate Resistance Parameters for RF MOSFETs Based on Three-Port Measurement
- Kang, In-Man (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
- Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
- Published : 2005.11.26
Abstract
In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance
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