Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Extraction of Substrate Resistance Parameters for RF MOSFETs Based on Three-Port Measurement

  • Kang, In-Man (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
  • Published : 2005.11.26
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Abstract

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.

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