A current sense amplifier for low-voltage and high-speed SRAM

저전압 SRAM 의 고속동작을 위한 전류감지 증폭기

  • Park, Hyun-Wook (Department of Electronic Engineering, Kyungpook National University) ;
  • Shim, Sang-Won (Department of Electronic Engineering, Kyungpook National University) ;
  • Chung, Yeon-Bae (Department of Electronic Engineering, Kyungpook National University)
  • 박현욱 (경북대학교 공과대학 전자공학과) ;
  • 심상원 (경북대학교 공과대학 전자공학과) ;
  • 정연배 (경북대학교 공과대학 전자공학과)
  • Published : 2005.11.26

Abstract

In this paper, we propose a new current sense amplifier for low-voltage, high-speed SRAM. As a supply voltage is reduced, a sensing delay is increased owing to reduced cell read current. It causes a low-speed operation in SRAM. To overcome this problem, we present a new current sense amplifier which consists of the current-mirror type circuit with feedback structure. For demonstration, a 0.8-V, 256-Kb SRAM incorporating the proposed current sense amplifier has been designed with $0.18-{\mu}m$ CMOS technology. The simulation results show 15.6ns of the sensing delay reduction in comparison with a previous current sense amplifier and 11.5ns of the sensing delay reduction in comparison with a voltage sense amplifier.

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