Thermal Stability Improvement of Ni Germanosilicide using Ni-Ta alloy for Nano-scale CMOS Technology

Nano-scale CMOS에 적용하기 위한 Ni-Ta 합금을 이용한 Ni-Germanosilicide의 열안정성 개선

  • Kim, Yong-Jin (Dept. of Electronics Engineering, Chungnam National University) ;
  • Oh, Soon-Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Yun, Jang-Gn (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Won-Jae (Dept. of Electronics Engineering, Chungnam National University) ;
  • Agchbayar, Tuya (Dept. of Electronics Engineering, Chungnam National University) ;
  • Ji, Hee-Hwan (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kim, Do-Woo (Dept. of Electronics Engineering, Chungnam National University) ;
  • Heo, Sang-Bum (R&D center, MagnaChip Semiconductor) ;
  • Cha, Han-Seob (R&D center, MagnaChip Semiconductor) ;
  • Kim, Young-Chul (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University) ;
  • Wang, Jin-Suk (Dept. of Electronics Engineering, Chungnam National University)
  • Published : 2005.11.26

Abstract

In this paper, Ni Germanosilicide using Ni-Ta/Co/TiN is proposed to improve thermal stability. The sheet resistance of Ni Germanosilicide utilizing pure Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30min. However, using the proposed Ni-Ta/Co/TiN structure, low temperature silicidation and wide range of RTP process window were achieved.

Keywords